| Part Number: FR691-1003-502H | Manufacturer: Bae Systems Maritime Services | NSN: 5962-01-238-6198 (5962012386198) |
| Item Name : Microcircuit Memory | CAGE Code: K3902 | FSC: 5962 Microcircuits Electronic |
| Alternate P/N : FR6911003502H | ||
| 05-10-2024 | ||
We are pleased to inform you that part number FR691-1003-502H is currently in stock. To receive a quote, please fill out the form below with all necessary information. This part number FR691-1003-502H, with NSN 5962012386198, is manufactured by Bae Systems Maritime Services. We will respond to your quote request within just 15 minutes.
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An experienced and dedicated sale representative will contact you within 15 minutes with a quote. For any other questions related to Part FR691-1003-502H, or to expedite your response, please feel free to call us at +1 (714) 705-4780, or email your Bill of Materials (BOM) to sales@veritableaviation.com. We are here to help 24/7, 365 days a year.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 925 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 520 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 172 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING570 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONDISPLAY ASSEMBL 84-27401-001 |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND FAST SETTLING AND WRESISTOR |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN9 INPUT |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTGOLD |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC2500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 2500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | FEAT | SPECIAL FEATURESNUCLEAR HARDNESS CRITICAL ITEM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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