| Part Number: 310429P2 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc | NSN: 5962-01-077-6118 (5962010776118) |
| Item Name : Microcircuit Memory | CAGE Code: 94117 | FSC: 5962 Microcircuits Electronic |
| 05-11-2024 | ||
We are pleased to inform you that part number 310429P2 is currently in stock. To receive a quote, please fill out the form below with all necessary information. This part number 310429P2, with NSN 5962010776118, is manufactured by Bae Systems Information And Electronic Systems Integration Inc. We will respond to your quote request within just 15 minutes.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-077-6118 Item Description: Microcircuit Memory | 5962 | 010776118 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | U | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 310429p2 | 1 | 8 | E |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING450 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN8 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC1500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 2500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT15942-0213-1-1150-2 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNIN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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