Alternative NSN: 5962-01-359-0333 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013590333 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Information And Electronic Systems Integration I , Cypress Semiconductor Inc , Performance Semiconductor Corp , Pyramid Semiconductor Corp |
Veritable Aviation, owned and operated by ASAP Semiconductor, makes the parts procurement process for NSN 5962-01-359-0333 as streamlined as possible. Our easy to use search engine opens up our 6-billion-part inventory open to our loyal customers. Simply type in a part number such as 330517-001, CY7C161A-25DBM, CY7C161A-45DMB or NSN 5962-01-359-0333 and receive a quote within fifteen minutes or less from one of our dedicated account managers. We work with well-known industry names Bae Systems Information And Electronic Systems Integration I, Cypress Semiconductor Inc, Performance Semiconductor Corp, Pyramid Semiconductor Corp.
We are dedicated to providing only the best products under NSN 5962-01-359-0333 through our quality assurance practices, earning us our FAA-AC 0056B accreditation and ISO 9001:2015 certification. To get your parts procurement process started, fill out the request for quote form below.
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
330517-001 | Bae Systems Information And Electronic Systems Integration I | microcircuit memory | Avl | RFQ |
CY7C161A-25DBM | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
CY7C161A-25DBM | Performance Semiconductor Corp | microcircuit memory | Avl | RFQ |
CY7C161A-25DBM | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
CY7C161A-45DMB | Cypress Semiconductor Inc | microcircuit memory | Avl | RFQ |
P4C1981-25CMB | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
P4C1981-25CMB M0296 | Pyramid Semiconductor Corp | microcircuit memory | Avl | RFQ |
P4C1981-25DMB | Performance Semiconductor Corp | microcircuit memory | Avl | RFQ |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | CBBL | FEATURES PROVIDEDBURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING385 0 MILLIWATTS |
MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2813 (5905000012813) |
5905-00-001-2834 (5905000012834) |
5905-00-001-2852 (5905000012852) |
5905-00-001-2882 (5905000012882) |
5905-00-001-2890 (5905000012890) |
5905-00-001-2920 (5905000012920) |
5905-00-001-2934 (5905000012934) |
5905-00-001-2951 (5905000012951) |
5905-00-001-2952 (5905000012952) |
5905-00-001-2954 (5905000012954) |
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