| Alternative NSN: 5962-01-106-8182 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011068182 |
| NCB Code: USA (01) |
| Manufacturers: Intersil Corporation , Edo Corp , Intersil Communications Inc |
Veritable Aviation, owned and operated by ASAP Semiconductor, makes the parts procurement process for NSN 5962-01-106-8182 as streamlined as possible. Our easy to use search engine opens up our 6-billion-part inventory open to our loyal customers. Simply type in a part number such as 1M6551MJF 883B, 423848-1, HM-6551-8, HM1-6551B-2, HM1-6551B-8 or NSN 5962-01-106-8182 and receive a quote within fifteen minutes or less from one of our dedicated account managers. We work with well-known industry names Intersil Corporation, Edo Corp, Intersil Communications Inc.
We are dedicated to providing only the best products under NSN 5962-01-106-8182 through our quality assurance practices, earning us our FAA-AC 0056B accreditation and ISO 9001:2015 certification. To get your parts procurement process started, fill out the request for quote form below.
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1M6551MJF 883B | Intersil Corporation | microcircuit memory | Avl | RFQ |
| 423848-1 | Edo Corp | microcircuit memory | Avl | RFQ |
| HM-6551-8 | Intersil Corporation | microcircuit memory | Avl | RFQ |
| HM1-6551B-2 | Intersil Corporation | microcircuit memory | Avl | RFQ |
| HM1-6551B-8 | Intersil Communications Inc | microcircuit memory | Avl | RFQ |
| HM1-6551B-8 | Intersil Corporation | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 080 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 388 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 085 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING22 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND LOW POWER AND SYNCHRONOUS AND WDISABLE AND WENABLE AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CRHL | BIT QUANTITY1024 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 3 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
| 5905-00-000-0136 (5905000000136) |
5905-00-001-2573 (5905000012573) |
5905-00-001-2813 (5905000012813) |
5905-00-001-2834 (5905000012834) |
| 5905-00-001-2852 (5905000012852) |
5905-00-001-2882 (5905000012882) |
5905-00-001-2890 (5905000012890) |
5905-00-001-2920 (5905000012920) |
| 5905-00-001-2934 (5905000012934) |
5905-00-001-2951 (5905000012951) |
5905-00-001-2952 (5905000012952) |
5905-00-001-2954 (5905000012954) |
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